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Dynamics of the Electronic Packaging Materials Industry (Part 2)

Dynamics of the Electronic Packaging Materials Industry (Part 2)

Due to the rapid increase in the integration level of integrated circuits, the heat generation of chips has risen sharply, leading to a decrease in chip lifespan. It is reported that for every 10℃ increase in temperature, the failure rate due to shortened lifespan of Ga As or Si semiconductor chips triples. This is caused by thermal fatigue and thermal stress resulting from poor heat dissipation performance between materials and mismatched thermal expansion coefficients in microelectronic integrated circuits and high-power rectifier devices. The key to addressing this issue is through proper packaging. Electronic packaging materials mainly include substrates, wiring, frames, interlayer dielectrics, and sealing materials. The earliest materials used for packaging were ceramics and metals. With the continuous improvement of circuit density and functionality, higher and higher requirements have been placed on packaging technology, which has also promoted the development of packaging materials.

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5G is driving packaging innovation in the radio frequency front-end

5G is driving packaging innovation in the radio frequency front-end

Smartphones use multi-chip SiP for the front-end module, filter set, and diversity receiving module in 4G LTE. SiP provides the required small size, shorter signal paths, and lower losses. The 4G LTE front-end module currently includes 10-15 chips, connected to organic substrates (up to 8 organic layers or 18 ceramic layers) using flip-chip ball bonding or copper pillars, while some power amplifiers still use wire bonding. 5G Sub-6GHz products are expected to utilize improved existing flip-chip SiP (such as double-sided FC packaging substrates) with a similar bill of materials to achieve incremental innovation. With the introduction of new architectures, 5G millimeter-wave frequencies have brought breakthrough packaging: fan-out wafer-level packaging (WLP) and glass substrate interposers, competing with advanced organic substrate flip-chip packaging with low-loss dielectrics.

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Thermal Analysis of 5G Optical Devices

Thermal Analysis of 5G Optical Devices

Currently, 5G has become a hot topic of global interest. Everyone knows that compared to 4G, 5G's download speed has increased by at least 9 to 10 times. In the 5G network era, regardless of the type of 5G bearer scheme, it cannot be separated from 5G communication devices. The requirements for optical devices in 5G are also becoming increasingly demanding, with smaller sizes, higher integration, higher speeds, and lower power consumption. The main commonly used device speeds for 5G fronthaul, midhaul, and backhaul are 25G, 50G, 100G, 200G, and 400G optical devices, with 25G and 100G optical devices being the most widely used 5G communication devices. As speeds increase and sizes decrease, this is an inevitable trend in the development of optical devices, which also places higher requirements on internal thermal management. How to quickly and effectively dissipate heat is a serious issue that must be addressed.

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What opportunities will 5G RF bring to the packaging industry?

What opportunities will 5G RF bring to the packaging industry?

The RF System-in-Package (SiP) market can be divided into two parts: primary packaging of various RF devices, such as chip/wafer-level filters, switches, and amplifiers (including RDL, RSV, and/or bump steps); and secondary SiP packaging during the surface mount technology (SMT) stage, where various devices are assembled with passive components on the SiP substrate. In 2018, the total size of the RF front-end module SiP market (including primary and secondary packaging) was US3.3billion,anditisexpectedtogrowatacompoundannualgrowthrate(CAGR)of11.35.3 billion by 2023.

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Industry trends of electronic packaging materials (I)

Industry trends of electronic packaging materials (I)

The current integrated circuits are developing towards miniaturization, high-density assembly, low cost, high performance, and high reliability, which places higher demands on the substrate, wiring materials, sealing materials, and interlayer dielectric materials. The emergence of high-performance, low-cost electronic packaging materials is needed. This provides enormous room for the development of metal-based electronic packaging composite materials. By changing the shape, size, and volume fraction of the reinforcements in metal-based composite materials, it is the research direction of metal-based electronic packaging composite materials to find a material that not only matches the thermal performance of the substrate but also has good mechanical properties, and whose manufacturing method is also economically applicable.

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Electronic packaging materials

Electronic packaging materials

The development of microelectronics technology is trending towards miniaturization, high-density, high-speed, and high-reliability, correspondingly placing higher demands on the high stability and quality of packaging processes, as well as the specific properties of packaging materials.

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What are the manufacturing methods for molybdenum-copper alloys?

What are the manufacturing methods for molybdenum-copper alloys?

Liquid phase sintering method: Tungsten-copper or molybdenum-copper mixed powders are pressed and formed, followed by liquid phase sintering at 1300-1500°C. Materials produced by this method exhibit poor uniformity, numerous closed pores, and a density typically below 98%. However, the addition of a small amount of nickel through activated sintering, mechanical alloying, or oxide reduction methods to prepare ultrafine or nanometer powders can improve sintering activity, thus enhancing the density of tungsten-copper and molybdenum-copper alloys. Nickel-activated sintering can significantly reduce the electrical and thermal conductivity of the material, while impurities introduced by mechanical alloying can also affect the material's conductivity. The oxide co-reduction method for powder preparation involves a complicated process, low production efficiency, and difficulty in mass production.

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What is molybdenum-copper alloy?

What is molybdenum-copper alloy?

Molybdenum-copper alloy is a material that can be used as an alternative to copper and tungsten-copper applications. It is made from high-quality molybdenum powder and oxygen-free copper powder, and is formed using isostatic pressing (high-temperature sintering-copper infiltration). The material has a fine and dense structure, excellent arc-breaking performance, good electrical conductivity, good thermal conductivity, and low thermal expansion.

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