Investor Relations

投资公告

投资者关系

股票信息

社会责任

2013

The company moved to Ningxiang base

2023

12-08

2007

Independently develop processing technology while improving industrial chain and surface treatment technology of electronic packaging materials

2023

12-08

2002

Develop molybdenum copper, CMC (Cu/Mo/Cu) and CPC (Cu/MoCu/Cu) products

2023

12-08

2000

Incorporation of the company

2023

12-08

1999

Develop tungsten copper electronic packaging materials

2023

12-08

Introduction of high-activity composite powder products

Our company has prepared a kind of high-activity composite powder through the spray granulation method, which is characterized by its extremely high sintering shrinkage performance. It is often used in the production of thermal sink materials with large differences in melting points, such as tungsten-copper and molybdenum-copper metal powder mixed powder billet pressing, injection molding and other production processes.

2023

12-08

Traditional Packaging Materials

Metal packaging materials are the earliest developed packaging materials, known for their high thermal conductivity, mechanical strength, good processing performance, and electromagnetic shielding effects. Traditional metal packaging materials primarily include Cu, Al, W, Mo, as well as Kovar alloy (Fe-Co-Ni alloy) and Invar alloy (Fe-Ni alloy). Cu and Al exhibit high thermal conductivity and excellent heat dissipation performance, but their high thermal expansion coefficients make it difficult to match with silicon wafers. Thermal cycling generated by the chip during operation can cause significant stress. Additionally, Cu has a relatively high density. Kovar alloy and Invar alloy have thermal expansion coefficients that match silicon wafers well, but their lower thermal conductivity can significantly impact the performance of highly integrated packaging devices. Compared to Al, these materials have higher densities and inferior stiffness. W and Mo offer improved thermal conductivity compared to Kovar and Invar alloys, along with lower thermal expansion coefficients. However, their poor wettability with silicon wafers requires the application of Ag or Ni coatings, increasing process complexity and costs. Their higher densities also limit their use in aerospace applications.

2023

12-08

Preparation method of metal matrix composite electronic packaging material

This method encompasses gas pressure infiltration casting, squeeze casting, and pressure-free infiltration casting. Gas pressure infiltration casting utilizes gas to transmit pressure, pressing the molten metal into the preform to obtain a composite material. Preforms can be made through common pressing, slurry casting, and injection molding methods. This method is highly effective for producing electronic packaging materials, achieving composite materials with added particle volume percentages ranging from 50% to 80%. However, it has the disadvantages of a slower production process and lower applied pressure. Squeeze casting involves making the reinforcement into a preform, placing the preform in a mold, and infiltrating the molten metal into the reinforcement preform through liquid pressure. Although there may be some residual gas in the produced electronic packaging material, the material quality is good, with the advantages of a short production cycle and mass production capabilities. The disadvantages include higher production costs, high requirements for infiltration pressure and molds, and significant limitations on the complexity of part shapes. The manufacturing process for pressure-free infiltration casting involves placing the matrix alloy ingot onto the preform, introducing a controlled atmosphere containing N2, and heating until the alloy melts and spontaneously infiltrates into the preform. The advantages include the ability to vary the amount of Si CP as needed, lower production costs, and the ability to produce complex grid-like electronic packaging materials. The main disadvantages are that it must be performed in a controlled N2 atmosphere, certain areas of the preform may not be fully infiltrated, there may be a certain amount of porosity in the product, and the production process takes a longer time.

2023

12-08

The main performance requirements of electronic packaging materials

Encapsulation materials play a role in supporting and protecting semiconductor chips and electronic circuits, as well as assisting in the dissipation of heat generated during circuit operation.

2023

12-08

Performance and Application of Tungsten-Copper Composite Materials

Tungsten boasts high melting point, high density, low coefficient of thermal expansion, and high strength, while copper exhibits excellent thermal conductivity and electrical conductivity. The W-Cu composite material, composed of tungsten and copper, combines the advantages of both W and Cu, such as high high-temperature strength, high electrical and thermal conductivity, good electrical erosion resistance, high hardness, low coefficient of thermal expansion, and certain plasticity. Furthermore, by adjusting its composition ratio, its various mechanical and physical properties can be controlled and optimized. Additionally, it possesses novel properties arising from the combination of tungsten and copper, such as self-cooling due to the heat absorption through evaporation of the copper content under high-temperature conditions. Therefore, it finds widespread applications in various industrial sectors such as aerospace, electronics, machinery, and electrical appliances, especially in high-tech fields.

2023

12-08

< 1...567...11 > proceed page

SAF Coolest v1.2 设置面板FAUSX-AVRN-GZXAE-AVZ

图片ALT信息： Changsha Sublimation Microelectronics Material Co., Ltd.
修改浏览器滑块样式： 4px,4px,#333
营业执照及SEO链接： Business License

无数据提示

Sorry, the current column has no content for the time being.!

You can view other columns or returnHome Page

SVG图标库请自行添加图标，用div包起来，并命名使用

Right online agent component